PART |
Description |
Maker |
CMPT2907AE |
ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR
|
Central Semiconductor Corp
|
CZT5401E10 |
ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR
|
Central Semiconductor Corp
|
CMUT5087E CMUT5088E CMUT5087E10 |
ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS
|
Central Semiconductor Corp
|
CMUD6263E CMUD6263SE CMUD6263AE CMUD6263CE |
ENHANCED SPECIFICATION SURFACE MOUNT ULTRAmini SILICON SCHOTTKY DIODES
|
CENTRAL[Central Semiconductor Corp]
|
CZT7090LE |
ENHANCED SPECIFICATION SURFACE MOUNT LOW VCE(SAT) PNP SILICON POWER TRANSISTOR
|
Central Semiconductor Corp
|
CMPSH-3E10 CMPSH-3AELEADFREE CMPSH-3CE |
ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODES 0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE SOT-23, 3 PIN
|
Central Semiconductor Corp Central Semiconductor, Corp. Central Semiconductor C...
|
CMPT3904E10 CMPT3906E CMPT3904E-15 |
ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS
|
Central Semiconductor Corp Central Semiconductor C...
|
CZT5551E |
ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR 0.6 A, 220 V, NPN, Si, POWER TRANSISTOR
|
Central Semiconductor, Corp.
|
749010013 744761068A |
All 16 terminals must lie on a plane within 004 of surface A after lead tinning specification for release specification for release
|
Wurth Elektronik GmbH & Co. KG, Germany. Wurth Elektronik GmbH &...
|
CMDSH-4E |
SMD Schottky Diode Single: High Current ENHANCED SPECIFICATION SCHOTTKY DIODE
|
Central Semiconductor Corp
|